Structural and Electrical Properties of ZnxPb(1-x)Te Thin Films By Vacuum Evaporation

Authors

  • U. P. Khairnar Author
  • P. H. Pawar Author
  • S. S. Behere Author

Keywords:

Zinc lead telluride, ZnTe, PbTe, X-ray, EDAX, polycrystalline

Abstract

Thin films of Zinc lead telluride (ZnxPb(1-x)Te) of solid solution with x = 0.1, 0.2, 0.3, 0.4, and 0.5 were synthesized, from the resulting ZnTe and PbTe composition used in preparation of thin films. The deposited samples were annealed and annealed samples were used for characterization. The semiconducting and thermoelectric properties of the samples were investigated by measuring electrical resistivity and Seebeck coefficient in the temperature range from 300 to 473 K for annealing samples. Activation energy for charge transport have been evaluated and found in the range of 0.269 to 0.396 eV. Thermoelectric power has been measured and found to be positive indicating that the samples are p-type semiconducting material. The X-ray diffraction analysis and EDAX confirmed that films are polycrystalline in nature.

References

[1] R. W. Vass, and R. M. Andersen, J. Appl. Phys. 45 (1974) 3463.

[2] D. V. Eddalls, L. W. James and R. L. Moon, Appl. Phys. Letter. 26 (1975) 467.

[3] A. G. Fischer, Thin Solid Films 36 (1976) 469.

[4] N. J. Suthan Kissinger, M. Jayachandran, K. Perumal and C. Sanjeevi Raja, Bull. Mater. Sci., 30, No. 6, 547 (2007).

[5] V. B. Pujari, S. H. Mane, V. S. Karande, J. S. Dargad and L. P. Deshmukh, Materials Chemistry and Physics, 83, 10 (2004).

[6] I. Miotkowski , R. Vogelgesang, H. Alawadhi, M. J. Seong, A. K. Ramdas, S. Miotkowska and W. Paszkowicz, J. Of Crystal Growth, 203, 51 (1999).

[7] D. S. Sutrave, G. S. Shahane, V. B. Patil and L. P. Deshmukh, Materials Chemistry and Physics, 65, 298 (2000).

[8] P. P. Hankare, S. D. Delekar, P. A. Chate, S. D. Sabane, K. M. Garadkar and V. M. Bhuse,

Semicond. Sci. Technol, 20, 257 (2005).

[9] M.S. Joshi and A.S. Vagh, J. Appl. Phys., 37 (1966) 315.

[10] S. Sutrave, and L.P. Deshmukh, Inidan. J. of Pure and Applied Phys., 37 (1999) 384.

[11] H.S. Soliman, and A.A. EL-shazly, J. of Materials in Electronics, 7 (1996) 233.

[12] F. S. Terra and G. M. Mahmoud, J. of Materials Science Letters, 8 (1997) 43.

[13] V. Damodara Das and C. Bahulayan, Physics Semiconductor Devices, Proceedings of the 11th International Workshop (December 11-15,2001)

[14] U. P. Khairnar, and G. P. Bhavsar, Cryst. Res. Technol, 37 (2002) 12, 1293-1302.

Downloads

Published

2017-06-30

How to Cite

Structural and Electrical Properties of ZnxPb(1-x)Te Thin Films By Vacuum Evaporation. (2017). International Journal of Advanced Research in Science, Management and Technology, 3(3), 1-6. https://ijarsmt.in/ijarsmt/article/view/50

Similar Articles

You may also start an advanced similarity search for this article.